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PDF FDMC612PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMC612PZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC612PZ
P-Channel PowerTrench® MOSFET
-20 V, -14 A, 8.4 mΩ
October 2013
Features
General Description
Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A
Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Termination is Lead-free and RoHS Compliant
HBM ESD capability level > 3.6 KV typical (Note 4)
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Applications
Battery Management
Load Switch
8765
DD D D
S
D
SD
Pin 1
SD
1 234
Top
GS S S
Bottom
Pin 1
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-20
±12
-40
-14
-50
38
26
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.9
53
°C/W
Device Marking
FDMC612PZ
Device
FDMC612PZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1
0.1
10-4
10-3
10-2
10-1
1
10 100
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
5
www.fairchildsemi.com
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