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PDF FDMC610P Data sheet ( Hoja de datos )
| Número de pieza | FDMC610P | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC610P
P-Channel PowerTrench® MOSFET
-12 V, -80 A, 3.9 mΩ
Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge
boost efficiency
Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
RoHS Compliant
November 2013
General Description
This P-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
High side switching for high end computing
High power density DC-DC synchronous buck converter
Pin 1
D
D
D
D
S
S
D
D
G
S
S
S
Pin 1
S
G
D
D
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Continuous
TC = 25 °C
- Pulsed
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
(Note 1a)
(Note 1a)
Ratings
-12
±8
-80
-22
-200
48
2.4
-55 to +150
2.6
53
Units
V
V
A
W
°C
°C/W
Device Marking
23AB
Device
FDMC610P
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
0.0001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 125 °C/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
100 1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMC610P Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMC610P.PDF ] | |
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