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PDF FDMC86320 Data sheet ( Hoja de datos )
| Número de pieza | FDMC86320 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC86320
N-Channel Power Trench® MOSFET
80 V, 22 A, 11.7 mΩ
June 2014
Features
General Description
Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A
Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A
MSL1 robust package design
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
Primary DC-DC Switch
Motor Bridge Switch
Synchronous Rectifier
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
DD
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Parameter
TC = 25 °C
TA = 25 °C
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
22
10.7
50
60
40
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.1
53
°C/W
Device Marking
FDMC86320
Device
FDMC86320
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2 DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
0.001
0.0005
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev.C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMC86320.PDF ] | |
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