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FDMC8588 fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDMC8588
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMC8588 fiche technique
FDMC8588
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 mΩ
Features
„ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A
„ State-of-the-art switching performance
„ Lower output capacitance, gate resistance, and gate charge
boost efficiency
„ Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
„ RoHS Compliant
November 2014
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ High side switching for high end computing
„ High power density DC-DC synchronous buck converter
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
Power 33
S
G
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Package limited) TC = 25 °C
- Continuous (Silicon Limited) TC = 25 °C
- Continuous
- Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±12
40
59
16.5
60
29
26
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
4.7
53
°C/W
Device Marking
08OD
Device
FDMC8588
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D4
1
www.fairchildsemi.com

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