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PDF FDMC7582 Data sheet ( Hoja de datos )
| Número de pieza | FDMC7582 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC7582
N-Channel PowerTrench® MOSFET
25 V, 49 A, 5.0 mΩ
April 2012
Features
General Description
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A
Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge
boost efficiency
Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance..
Application
High side switching for high end computing
Clip bonding technology further reduces On resistance and
source inductance
RoHS Compliant
High power density DC-DC synchronous buck
Low loss load switch
Communication & telecon Point of Load
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
Power 33
S
G
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited) Tc=25C
- Continuous (Silicon Limited) Tc=25C
- Continuous
- Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 4)
(Note 1a)
Ratings
25
±20
49
76
16.7
60
38
52
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.4
53
°C/W
Device Marking
FDMC7582
Device
FDMC7582
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC7582 Rev.C6
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMC7582 Rev.C6
5
www.fairchildsemi.com
5 Page | ||
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