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PDF FDMS037N08B Data sheet ( Hoja de datos )

Número de pieza FDMS037N08B
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDMS037N08B
N-Channel PowerTrench® MOSFET
75 V, 100 A, 3.7 mΩ
November 2013
Features
• RDS(on) = 3.01 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
• Low FOM RDS(on)*QG
• Low Reverse Recovery Charge, Qrr = 80 nC
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection circuit
• DC Motor Drives and Uninterruptible Power Supplies
Top Bottom
Pin 1
SS
S
G
D
DDD
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TA = 25oC)
(Note 1a)
- Pulsed
(Note 2)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
(TA = 25oC)
Operating and Storage Temperature Range
(Note 3)
(Note 1a)
FDMS037N08B
75
±20
100
128
19.9
400
180.6
104.2
0.83
-55 to +150
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1a)
FDMS037N08B
1.2
50
Unit
V
V
A
A
mJ
W
W
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDMS037N08B Rev. C2
1
www.fairchildsemi.com

1 page




FDMS037N08B pdf
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single pulse
0.005
0.01
0.1
PDM
*Notes:
t1
t2
1. ZθJA(t) = 125oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
1 10
tR1,eRcetcatnagnugulalarrPPuullssee DDuurraattioionn[s[esce]c]
100
1000
©2012 Fairchild Semiconductor Corporation
FDMS037N08B Rev. C2
5
www.fairchildsemi.com

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