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Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDMS86550
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS86550 fiche technique
March 2015
FDMS86550
N-Channel PowerTrench® MOSFET
60 V, 234 A, 1.65 mΩ
Features
General Description
„ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
„ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 56
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
60
±20
234
148
32
1021
937
156
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86550
Device
FDMS86550
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMS86550 Rev.1.7
1
www.fairchildsemi.com

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