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PDF FDMS8090 Data sheet ( Hoja de datos )
| Número de pieza | FDMS8090 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2013
FDMS8090
PowerTrench® Symmetrical Dual
100 V N-Channel MOSFET
Features
Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A
Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
100% UIL tested
RoHS Compliant
General Description
This device includes two fast switching (Qgd minimized) 100V
N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP)
package. The package is enhanced for exceptional thermal
performance.
Applications
Bridge Topologies
Synchronous Rectifier Pair
Motor Drives
Top
Pin 1
Bottom
S2 S2 S2 G2
D2
D1
Power 56
S1 S1 S1 G1 Pin 1
G1 1
S1 2
S1 3
S1 4
Contact to D1 Contact to D2
(backside) (backside)
Q1 Q2
8 G2
7 S2
6 S2
5 S2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
40
10
120
253
59
2.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.1
55
°C/W
Device Marking
FDMS8090
Device
FDMS8090
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8090 Rev.C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 138 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMS8090 Rev.C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMS8090.PDF ] | |
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