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PDF FDMS7580 Data sheet ( Hoja de datos )
| Número de pieza | FDMS7580 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2014
FDMS7580
N-Channel Power Trench® MOSFET
25 V, 7.5 mΩ
Features
General Description
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A
Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery
MSL1 robust package design
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
Control MOSFET for Synchronous Buck Converters
100% UIL tested
Notebook
RoHS Compliant
Server
Telecomm
High Efficiency DC-DC Switch Mode Power Supplies
Top Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
DD
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
28
49
15
60
32
27
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.6
50
°C/W
Device Marking
FDMS7580
Device
FDMS7580
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7580 Rev.C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
100
1000
FDMS7580 Rev.C1
5 www.fairchildsemi.com
5 Page | ||
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