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ROHM Semiconductor - Nch 600V 4A Power MOSFET

Numéro de référence R6004ENX
Description Nch 600V 4A Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R6004ENX fiche technique
R6004ENX
Nch 600V 4A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
lFeatures
1) Low on-resistance.
600V
980mW
4A
40W
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6004ENX
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *3
IAR
PD
Tj
Tstg
dv/dt *4
600
4.0
2.2
8.0
20
46
0.13
0.8
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B

PagesPages 13
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