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Numéro de référence | CJMNT33 | ||
Description | PNP Power Transistor | ||
Fabricant | JCET | ||
Logo | |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management Transistors- MOSFET
CJMNT33 PNP Power Transistor with N-MOSFET
V(BR)DSS/BVCEO
20V
-32V
RDS(on)MAX
600mΩ@4.5V
650mΩ@2.5V
700mΩ@1.8V
/
ID/IC
0.8A
-1.5A
DFNWB2×2-6L-I
FEATURE
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2×2-6L-I
MARKING
APPLICATION
z Charging circuit
z Other power management in portable equipment
Equivalent circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous(Note1)
IC Collector Current-Continuous(Note2)
ICM Collector Current-Pulse(Note3)
N-MOSFET
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Collector Current-Continuous(Note2)
IDM Collector Current-Pulse(Note3)
Power Dissipation, Temperature and Thermal Resistance
PD
PC
RθJA
Tj
Tstg
PowerDissipation
Power Dissipation (Tc=25℃ ,Note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
TL Lead Temperature
ZZZFMHOHFFRP
1
Value
-32
-32
-6
-1.5
-0.6
-4
20
±5
0.8
0.69
1.4
0.7
2.5
178.6
150
-55~+150
260
Unit
V
V
V
A
A
A
V
V
A
A
A
W
W
℃/W
℃
℃
℃
C,May,215
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Pages | Pages 6 | ||
Télécharger | [ CJMNT33 ] |
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