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PDF CJMNT31 Data sheet ( Hoja de datos )
| Número de pieza | CJMNT31 | |
| Descripción | PNP Power Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management Transistors-MOSFET
CJMNT31 PNP Power Transistor with N-MOSFET
V(BR)DSS/VR
20V
-30V
RDS(on)MAX
360mΩ@4.5V
410mΩ@2.5V
480mΩ@1.8V
1.3Ω@1.5V
/
ID/IC
0.69A
-2A
DFNWB2×2-6L-I
FEATURES
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2x2-6L-I
MARKING: 31
APPLICATIONS
z Charging circuit
z Other power management in portable equipments
Equivalent circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous(Note1)
IC Collector Current-Continuous(Note2)
ICM Collector Current-Pulse(Note3)
N-MOSFET
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous(Note1)
Drain Current -Continuous(Note2)
IDM Drain Current - Pulse(Note3)
Power Dissipation, Temperature and Thermal Resistance
PD
PC
RθJA
Tj
Tstg
TL
Power Dissipation
Power Dissipation (Tc=25℃ ,Note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature
Value
-30
-30
-6
-3
-2
-6
20
±6
0.8
0.69
1.4
0.7
2.5
179
150
-55~+150
260
ZZZFMHOHFFRP
1
Unit
V
V
V
A
A
A
V
V
A
A
A
W
W
℃/W
℃
℃
℃
G,May,2015
1 page  
I
N1
Symbol
A
A1
A3
D
E
D1
E1
D2
E2
e1
e2
k
b
e
L
Dimensions In Millimeters
Min.
Max.
0.700
0.800
0.000
0.050
0.203REF.
1.924
2.076
1.924
2.076
0.850
1.050
0.700
0.900
0.200
0.400
0.700
0.900
0.650TYP.
0.325TYP
0.200MIN.
0.250
0.350
0.650TYP.
0.300
0.400
Dimensions In Inches
Min.
Max.
0.028
0.032
0.000
0.002
0.008REF.
0.076
0.082
0.076
0.082
0.033
0.041
0.028
0.035
0.008
0.016
0.028
0.035
0.026TYP.
0.013TYP
0.008MIN.
0.010
0.014
0.026TYP.
0.012
0.016
I
www.cj-elec.com
5
G,May,2015
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CJMNT31.PDF ] | |
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