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PDF 3DD13003N9 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13003N9 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003N9 TRANSISTOR (NPN)
TO-126
FEATURES
Power switching applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
700
400
11
1.5
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
Symbol
Test conditions
V(B=R)CBO IC= 1mA,IE 0
V(BR=)CEO IC=10mA,IB 0
V(=BR)EBO IE= 1mA,IC 0
ICB=O VCB=600V,IE 0
ICE=O VCE=400V,IB 0
=IEBO VEB=9V,IC 0
hFE(=1) VCE=5V, IC 0.5A
hFE(=2) VCE=5V, IC 1mA
hF=E(3) VCE=5V, IC 1A
VCE=(sat)1 IC=0.5A,IB 0.1A
=VCE(sat)2 IC=1A,IB 0.2A
VBE=(sat)1 IC=0.5A,IB 0.1A
=VBE(sat)2 IC=1A,IB 0.2A
tS IC= 250mA
1 . BASE
2. COLLECTOR
3. EMITTER
Min Typ Max
700
400
11
100
500
100
10 40
10
10
0.15
0.25
1
1
24
CLASSIFICATION of hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
Unit
V
V
V
uA
uA
uA
V
V
V
V
us
CLASSIFICATION of tS
Rank
A1
Range
2-2.5
A2
2.5-3
B1
3-3.5
B2
3.5-4
www.cj-elec.com
1
D,Oct,2014
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DD13003N9.PDF ] | |
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