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PDF 3DD13002S Data sheet ( Hoja de datos )
| Número de pieza | 3DD13002S | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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Hay una vista previa y un enlace de descarga de 3DD13002S (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002S TRANSISTOR (NPN)
TO-92
FEATURES
Power switching applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
600
400
6
1
0.75
167
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tf
tS
Test conditions
IC= 0.1mA,IE=0
IC= 1mA,IB=0
IE= 0.1mA,IC=0
VCB=600V,IE=0
VCE=400V,IB=0
VEB=7V,IC=0
VCE=10V, IC=200mA
VCE=10V, IC=250uA
IC=200mA,IB=40mA
IC=200mA,IB=40mA
VCE=10V, IC=100mA,f=1MHz
IC=1A,IB1=IB2=0.2A,VCC=100V
IC=1A,IB1=IB2=0.2A,VCC=100V
1 . EMITTER
2. COLLECTOR
3. BASE
Min Typ
600
400
6
9
5
5
Max
100
100
100
40
0.5
1.1
0.5
2.5
Unit
V
V
V
uA
uA
uA
V
V
MHz
us
us
CLASSIFICATION of hFE(1)
Range
9-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION of VCE(sat)
Rank
A
B
Range
<0.25
0.25-0.45
www.cj-elec.com
1
D,Aug,2016
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DD13002S.PDF ] | |
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