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Numéro de référence | 2SA1873 | ||
Description | DUAL TRANSISTOR | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Transistors
2SA1873 DUAL TRANSISTOR (PNP+PNP)
Features
z Small package (dual type)
z High voltage and high current
z High hFE
z Excellent hFE linearity
z Complementary to 2SC4944
MARKING: SY SGR
SOT-353
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-150
200
150
-55 to150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=-100μA,IE=0
IC=-1mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VEB=-5V,IC=0
VCE=-6V,IC=-2mA
IC=-100mA,IB=-10mA
VCE=-10V,IC=-1mA
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
Y
120-240
SY
Min Typ Max Unit
-50 V
-50 V
-5 V
-0.1 μA
-0.1 μA
120 400
-0.3 V
80 MHz
7 pF
GR
200-400
SGR
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Pages | Pages 3 | ||
Télécharger | [ 2SA1873 ] |
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