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PDF FERD30H100S Data sheet ( Hoja de datos )

Número de pieza FERD30H100S
Descripción 100V field-effect rectifier diode
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! FERD30H100S Hoja de datos, Descripción, Manual

FERD30H100S
100 V field-effect rectifier diode
Datasheet - production data
A
K
KA
K
A
K
A
TO-220AB
A
KA
K IPAK
KA
A
DPAK
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
Description
The device is based on a proprietary technology
that achieves the best in class VF/IR trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined applications
where both efficiency and thermal performance
are key. With a lower dependency of leakage
current (IR) and forward voltage (VF) in function of
temperature, the thermal runaway risk is reduced.
It is highly recommended to be used in adapters
and chargers.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
VF (max.)
IR (max.)
Tj (max.)
30 A
100 V
0.405 V
130 µA
175 °C
April 2016
DocID029159 Rev 1
This is information on a product in full production.
1/14
www.st.com

1 page




FERD30H100S pdf
FERD30H100S
Package information
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
Recommended torque value: 0.55 N·m (for TO-220AB)
Maximum torque value: 0.6 N·m (for TO-220AB)
DocID029159 Rev 1
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FERD30H100S arduino
FERD30H100S
2.3 IPAK package information
Figure 11: IPAK package outline
Package information
DocID029159 Rev 1
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