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PDF 2N7426 Data sheet ( Hoja de datos )

Número de pieza 2N7426
Descripción P-Channel Transistor
Fabricantes ETC 
Logotipo ETC Logotipo



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No Preview Available ! 2N7426 Hoja de datos, Descripción, Manual

The documentation and process conversion measures
necessary to comply with this document shall be
completed by 6 February 2014.
INCH-POUND
MIL-PRF-19500/660E
6 December 2013
SUPERSEDING
MIL-PRF-19500/660D
11 February 2013
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426,
JANTXVR, JANTXVF, JANSR, AND JANSF
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type
as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
See 6.5 for JANHC and JANKC die versions.
1.2 Physical dimensions. See figure 1, TO-254AA.
1.3 Maximum ratings. Unless otherwise specified, TA = +25oC.
Type
PT (1) PT R θJC VDS VDG VGS ID1 (3) (4) ID2 (3)(4) IS
TC =
TA =
(2)
TC =+25°C TC =
+25°C +25°C
+100°C
IDM TJ
(5) and
TSTG
2N7424
2N7425
2N7426
W
W °C/W V dc V dc V dc
A dc
250
3.0 0.50 -60 -60
±20
-35
250 3.0 0.50 -100 -100 ±20 -35
250 3.0 0.50 -200 -200 ±20 -27
A dc
-30
-24
-17
A dc
-35
-35
-27
A (pk)
-140
-140
-108
°C
-55
to
+150
(1) Derate linearly 2.0 W/°C for TC > +25°C.
(2) See figure 2, thermal impedance curves.
(3) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal
construction.
ID =
TJM - TC
( RθJC ) x ( RDS ( on ) at TJM )
(4) See figure 3, maximum drain current graphs.
(5) IDM = 4 x ID1 as calculated in note 3.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to [email protected]. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961

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2N7426 pdf
MIL-PRF-19500/660E
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or design
changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall
provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the
device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II.
SEE characterization data shall be made available upon request of the qualifying or acquiring activity.
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2N7426 arduino
MIL-PRF-19500/660E
TABLE I. Group A inspection - Continued.
Inspection
1/
Method
MIL-STD-750
Condition
Symbol
Subgroup 5
Safe operating area
test (high voltage)
Electrical measurements
3474
See figure 4
tp = 10 ms min. VDS = 80 percent of
maximum rated VDS
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471 Condition B
On-state gate charge
2N7424
2N7425
2N7426
QG(ON)
Gate to source charge
2N7424
2N7425
2N7426
QGS
Gate to drain charge
2N7424
2N7425
2N7426
QGD
Reverse recovery time
2N7424
2N7425
2N7426
3473
di/dt = -100 A/µs, VDD -50 V
ID = ID1
trr
1/ For sampling plan, see MIL-PRF-19500.
2/ This test required for the following end-point measurements only:
Group B, subgroups 3 and 4 (JANS).
Group B, subgroups 2 and 3 (JANTXV).
Group C, subgroups 2 and 6.
Group E, subgroup 1.
Limits
Min Max
260
290
300
66
72
60
91
77
70
270
300
600
Unit
nC
nC
nC
nC
nC
nC
nC
nC
nC
ns
ns
ns
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