PDF IRF830B Data sheet ( Hoja de datos )

Número de pieza	IRF830B
Descripción	D Series Power MOSFET
Fabricantes	Vishay
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No Preview Available ! www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 20 3 5 Single 1.5 TO-220AB S D G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Consumer electronics - Displays (LCD or plasma TV) • Server and telecom power supplies - SMPS • Industrial - Welding - Induction heating - Motor drives • Battery chargers TO-220AB IRF830BPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering Recommendations (Peak temperature) c for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A. c. 1.6 mm from case. d. ISD  ID, starting TJ = 25 °C. LIMIT 500 ± 30 30 5.3 3.4 10 0.83 28.8 104 -55 to +150 24 0.28 300 UNIT V A W/°C mJ W °C V/ns °C S16-0109-Rev. B, 25-Jan-16 1 Document Number: 91520 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page www.vishay.com VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 12 - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 13 - Switching Time Waveforms VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T IAS 0.01 Ω + - VDD Fig. 14 - Unclamped Inductive Test Circuit VDS VDS tp VDD IAS Fig. 15 - Unclamped Inductive Waveforms IRF830B Vishay Siliconix 10 V QGS VG QG QGD Charge Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 12 V 50 kΩ 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S16-0109-Rev. B, 25-Jan-16 5 Document Number: 91520 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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