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CJU30N03 fiches techniques PDF

JCET - N-Channel Power MOSFET / Transistor

Numéro de référence CJU30N03
Description N-Channel Power MOSFET / Transistor
Fabricant JCET 
Logo JCET 





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CJU30N03 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU30N03 N-Channel Power MOSFET
GENERAL DESCRIPTION
The CJU30N03 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURE
z High density cell design for ultra low Rdson
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
APPLICATION
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulsed Avalanche Energy*
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
Tstg
*EAS condition: VDD=20V,L=0.5mH, RG=25, Starting TJ = 25°C
Value
30
±20
30
80
72
1.25
100
150
-50 ~+150
Unit
V
A
mJ
W
/W
www.cj-elec.com
1
A-3,Nov,2015

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