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PDF CJU04N60 Data sheet ( Hoja de datos )
| Número de pieza | CJU04N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJU04N60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU04N60 600V N-Channel Power MOSFET
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IS
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
4.0
260
100
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
G,Oct,2014
1 page  
To-252(4R)-2L Tape and Reel
www.cj-elec.com
5
G,Oct,2014
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJU04N60.PDF ] | |
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