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XBS306S19R-G fiches techniques PDF

Torex Semiconductor - Schottky Barrier Diode

Numéro de référence XBS306S19R-G
Description Schottky Barrier Diode
Fabricant Torex Semiconductor 
Logo Torex Semiconductor 





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XBS306S19R-G fiche technique
XBS306S19R-G
Schottky Barrier Diode, 3A, 60V Type
ETR16034-001
FEATURES
Forward Voltage
Forward Current
: VF=0.59V (TYP.)
: IF(AV)=3A
Repetitive Peak Reverse Voltage : VRM=60V
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL
RATINGS
UNITS
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current (Average)
Non Continuous Forward Surge Current(*1)
Junction Temperature
VRM
VR
IF(AV)
IFSM
Tj
60 V
60 V
3A
50 A
125
Storage Temperature Range
Tstg
-55+150
(*1) Non continuous high amplitude 60Hz half-sine wave.
APPLICATIONS
Rectification
Protection against reverse connection of battery
PACKAGING INFORMATION
SMA-XG
Unit : mm
4.45±0.2
MARKING RULE
①②③④⑤⑥: 306S19(Product Number)
⑦⑧
: Assembly Lot Number
5.1±0.25
1.2±0.3
PRODUCT NAME
PRODUCT NAME
XBS306S19R-G(*1)
PACKAGE
SMA-XG
ORDER UNIT
2,000/Reel
(*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
SYMBOL
VF
IR1
IR2
Ct
trr
CONDITIONS
IF=3A
VR=30V
VR=60V
VR=1V , f=1MHz
IF=IR=10mA , irr=1mA
MIN.
-
-
-
-
-
TYP.
0.59
3
9
195
55
MAX.
0.66
-
300
-
-
UNITS
V
μA
μA
pF
ns
Ta=25
CIRCUIT
1/4

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