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PDF AD8349 Data sheet ( Hoja de datos )

Número de pieza AD8349
Descripción Quadrature Modulator
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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Data Sheet
FEATURES
Output frequency range: 700 MHz to 2700 MHz
Modulation bandwidth: dc to 160 MHz (large signal BW)
1 dB output compression: 5.6 dBm @ 2140 MHz
Output disable function: output below –50 dBm in < 50 ns
Noise floor: –156 dBm/Hz
Phase quadrature error: 0.3 degrees @ 2140 MHz
Amplitude balance: 0.1 dB
Single supply: 4.75 V to 5.5 V
Pin compatible with AD8345/AD8346s
16-lead, exposed-paddle TSSOP package
APPLICATIONS
Cellular/PCS communication systems infrastructure
WCDMA/CDMA2000/PCS/GSM/EDGE
Wireless LAN/wireless local loop
LMDS/broadband wireless access systems
PRODUCT DESCRIPTION
The AD8349 is a silicon, monolithic, RF quadrature modulator
that is designed for use from 700 MHz to 2700 MHz. Its
excellent phase accuracy and amplitude balance enable high
performance direct RF modulation for communication systems.
The differential LO input signal is buffered, and then split into
an in-phase (I) signal and a quadrature-phase (Q) signal using a
polyphase phase splitter. These two LO signals are further
buffered and then mixed with the corresponding I channel and
Q channel baseband signals in two Gilbert cell mixers. The
mixers’ outputs are then summed together in the output
amplifier. The output amplifier is designed to drive 50 Ω loads.
The RF output can be switched on and off within 50 ns by
applying a control pulse to the ENOP pin.
700 MHz to 2700 MHz
Quadrature Modulator
AD8349
FUNCTIONAL BLOCK DIAGRAM
IBBP 1
AD8349
16 QBBP
IBBN 2
15 QBBN
COM1 3
COM1 4
14 COM3
Σ
13 COM3
LOIN 5
LOIP 6
PHASE
SPLITTER
12 VPS2
11 VOUT
VPS1 7
ENOP 8
BIAS
10 COM3
9 COM2
Figure 1.
The AD8349 can be used as a direct-to-RF modulator in digital
communication systems such as GSM, CDMA, and WCDMA
base stations, and QPSK or QAM broadband wireless access
transmitters. Its high dynamic range and high modulation
accuracy also make it a perfect IF modulator in local multipoint
distribution systems (LMDS) using complex modulation
formats.
The AD8349 is fabricated using Analog Devices’ advanced
complementary silicon bipolar process, and is available in a 16-
lead, exposed-paddle TSSOP package. Its performance is
specified over a –40°C to +85°C temperature range.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2003–2012 Analog Devices, Inc. All rights reserved.

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AD8349 pdf
AD8349
Data Sheet
Parameter
Bandwidth (3 dB)
OUTPUT ENABLE
Off Isolation
Turn-On Settling Time
Turn-Off Settling Time
ENOP High Level (Logic 1)
ENOP Low Level (Logic 0)
POWER SUPPLIES
Voltage
Supply Current
Conditions
LO = 1500 MHz, baseband input = 600 mV p-p sine wave on 400 mV dc
LO = 1500 MHz, baseband input = 60 mV p-p sine wave on 400 mV dc
Pin ENOP
ENOP Low
ENOP Low to High (90% of envelope)
ENOP High to Low (10% of envelope)
Min Typ
160
340
–78
20
50
2.0
Pins VPS1 and VPS2
ENOP = High
ENOP = Low
4.75
135
130
Max Unit
MHz
MHz
–50 dBm
ns
ns
V
0.8 V
5.5 V
150 mA
145 mA
1 The amplitude of the third harmonic relative to the single sideband power decreases with decreasing baseband drive level (see Figure 19, Figure 20, and Figure 21).
Rev. B | Page 4 of 28

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AD8349 arduino
AD8349
Data Sheet
–10
–15
SSB, dBm
–20
3USB, dBc
10
8
6
–25 4
–30 2
–35 0
–40
USB, dBC
–2
–45 –4
–50
LO, dBm
–55
–6
–8
–60 –10
–65 –12
–70 –14
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
BASEBAND DIFFERENTIAL INPUT VOLTAGE (V p-p)
Figure 19. Third Order Distortion (3USB), Carrier Feedthrough, Sideband
Suppression, and SSB POUT vs. Baseband Differential Input Level
(FLO = 900 MHz, FBB = 1 MHz, I and Q Inputs Driven in Quadrature, TA = 25°C)
–10 10
–15
SSB, dBm
–20
8
6
–25 4
–30 2
–35
LO, dBm
0
–40 –2
–45
–50 USB, dBc
3USB, dBc
–55
–4
–6
–8
–60 –10
–65 –12
–70 –14
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
BASEBAND DIFFERENTIAL INPUT VOLTAGE (V p-p)
160
155
150
145 VS = 5V
140
VS = 5.25V
135
130
VS = 4.75V
125
120
115
110
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80
TEMPERATURE (°C)
Figure 22. Power Supply Current vs. Temperature
500
200
NO TERMINATION
Figure 20. Third Order Distortion (3USB), Carrier Feedthrough, Sideband
Suppression, and SSB POUT vs. Baseband Differential Input Level
(FLO = 1900 MHz, FBB = 1 MHz, I and Q Inputs Driven in Quadrature, TA = 25°C)
Figure 23. Smith Chart of LOIP Port S11 (LOIN Pin AC-Coupled
to Ground). Curves with Balun and External Termination
Resistors Also Shown (TA = 25°C)
–10 10
3USB, dBc
–15 8
SSB, dBm
–20 6
–25 4
–30 2
–35 0
LO, dBm
–40 –2
–45 –4
–50 –6
USB, dBc
–55 –8
–60 –10
–65 –12
–70 –14
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
BASEBAND DIFFERENTIAL INPUT VOLTAGE (V p-p)
0
–5
–10
–15 VS = 5V
–20
–25
–30
–35
–40
700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700
FREQUENCY (MHz)
Figure 21. Third Order Distortion (3USB), Carrier Feedthrough, Sideband
Suppression, and SSB POUT vs. Baseband Differential Input Level
(FLO = 2140 MHz, FBB = 1 MHz, I and Q Inputs Driven in Quadrature, TA = 25°C)
Figure 24. Return Loss S22of VOUT Output (TA = 25°C)
Rev. B | Page 10 of 28

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