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PDF NCE65R2K4I Data sheet ( Hoja de datos )
| Número de pieza | NCE65R2K4I | |
| Descripción | N-Channel Super Junction Power MOSFET | |
| Fabricantes | NCE Power | |
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NCE65R2K4I，NCE65R2K4K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS@Tjmax
RDS(ON) TYP
ID
710
2.2
1.8
V
Ω
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R2K4I
TO-251
NCE65R2K4I
NCE65R2K4K
TO-252
NCE65R2K4K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25℃)
PD
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
EAS
IAR
EAR
TO-251
TO-252
Value
650
±30
1.8
1.2
5.4
22
0.176
40
0.9
0.06
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0
1 page  
Test circuit
1）Gate charge test circuit & Waveform
NCE65R2K4I，NCE65R2K4K
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NCE65R2K4I.PDF ] | |
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