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NCE Power - N-Channel Super Junction Power MOSFET

Numéro de référence NCE65R2K2K
Description N-Channel Super Junction Power MOSFET
Fabricant NCE Power 
Logo NCE Power 





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NCE65R2K2K fiche technique
NCE65R2K2INCE65R2K2K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS@Tjmax
RDS(ON) TYP
ID
710
2.2
2
V
Ω
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R2K2I
TO-251
NCE65R2K2I
NCE65R2K2K
TO-252
NCE65R2K2K
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25)
PD
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
EAS
IAR
EAR
TO-251
TO-252
Value
650
±30
2
1.3
6
23
0.184
45
1
0.06
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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