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10NM60N fiches techniques PDF

STMicroelectronics - Power MOSFET ( Transistor )

Numéro de référence 10NM60N
Description Power MOSFET ( Transistor )
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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10NM60N fiche technique
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%


DPAK
7$%



TO-220



TO-220FP
7$%
IPAK



Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55
ID PTOT
10 A
70 W
25 W
70 W
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
Applications
' 7$%
Switching applications
Description
* 
6 
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
1/28
www.st.com

PagesPages 28
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