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Numéro de référence | 10NM60N | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%
DPAK
7$%
TO-220
TO-220FP
7$%
IPAK
Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55 Ω
ID PTOT
10 A
70 W
25 W
70 W
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Figure 1. Internal schematic diagram
Applications
'7$%
• Switching applications
Description
*
6
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
1/28
www.st.com
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Pages | Pages 28 | ||
Télécharger | [ 10NM60N ] |
No | Description détaillée | Fabricant |
10NM60N | Power MOSFET ( Transistor ) | STMicroelectronics |
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