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PDF IPP114N12N3G Data sheet ( Hoja de datos )
| Número de pieza | IPP114N12N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on)max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP114N12N3 G
IPP114N12N3 G
120 V
11.4 mΩ
75 A
Package
Marking
PG-TO220-3
114N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=75 A, R GS=25 Ω
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value
75
53
300
120
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.4
page 1
2011-11-25
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
250
10 V 8 V
7V
200
150 6.5 V
100 6 V
5.5 V
50
5V
4.5 V
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
250
4
IPP114N12N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
4.5 V
25
5V
20 5.5 V
15
6V
10 10 V
5
0
5 0 20 40
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
80
100
200 80
150 60
100
50
0
0
Rev. 2.4
175 °C
25 °C
246
VGS [V]
40
20
0
80
page 5
20 40 60
ID [A]
80
2011-11-25
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPP114N12N3G.PDF ] | |
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