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Número de pieza | IPD053N06N | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD053N06N (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPD053N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
5.3 mW
45 A
32 nC
27 nC
PG-TO252-3
Type
IPD053N06N
Package
PG-TO252-3
Marking
053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
45 A
45
V GS=10 V, T C=25 °C,
R thJA =50K/W
18
Pulsed drain current2)
I D,pulse T C=25 °C
180
Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W
60 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
180
10 V
7V
160
140
120
100
80
60
40
20
IPD053N06N
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
16
6 V 14
5 V 5.5 V
6V
12
5.5 V
10
8
6
5V
4
7V
10 V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS [V]
0
0 20 40 60 80 100 120 140 160 180
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
180
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
160 70
140
60
120
50
100
40
80
30
60
40 20
20 175 °C
25 °C
10
0
02468
VGS [V]
0
0 5 10 15 20 25 30 35 40 45
ID [A]
Rev.2.2
page 5
2012-12-20
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD053N06N.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD053N06N | Power-Transistor | Infineon |
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