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Número de pieza | FMET-22010 | |
Descripción | Trench Schottky Diode | |
Fabricantes | Sanken | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FMET-22010 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! VRSM = 100 V, IF(AV) = 20 A
Trench Schottky Diode
FMET-22010
Features
FMET-22010 is 100 V / 20 A Schottky Diode of the
Trench structure and has the improved characteristics of
VF and IR. These characteristics realize the improving of
power supply efficiency, and the high frequency system.
● VRM------------------------------------------------------ 100 V
● IF(AV)--------------------------------------------------------20A
● VF (125 °C, IF = 5 A) --------------------------- 0.57 V typ.
Applications
The high speed switching applications as follows:
● DC-DC Converter
● Adapter
Package
TO220F-3L
(1)
Preliminary
(1)(2)(3)
(2)
(1) Anode
(2) Cathode
(3) Anode
(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, Tj is 25 °C
Parameter
Peak Repetitive Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRSM
VRM
IF(AV)
IFSM
Tj
Tstg
Rating
100
100
20
110
−40 to 150
−40 to 150
Unit Notes
V
V
A
A
10 ms
Half sinewave, one shot
°C
°C
Electrical Characteristics
Unless otherwise specified, Tj is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
IF = 5 A
VF
IF = 10 A
− 0.67 −
V
− 0.81 0.85 V
Forward Voltage Drop
Under High Temperature
H・VF
Tj = 125 °C, IF = 5 A
Tj = 125 °C, IF = 10 A
− 0.57 −
− 0.67 −
V
V
Reverse Leakage Current
IR VR = VRM
−
0.4 70
µA
Reverse Leakage Current
Under High Temperature
H・IR
VR = VRM, Tj = 150 °C
−
4.0 35
mA
Thermal Resistance*
Rth(j-c)
− − 4.0 °C/W
* Rth(j-c) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw
hole of case.
FMET-22010-DSE Rev.0.2
Apr. 12, 2016
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en
1
1 page FMET-22010
Package Outline
TO220F-3L
Preliminary
NOTES:
1) Dimension is in millimeters.
2) Pin treatment Pb-free. Device composition compliant with the RoHS directive.
Marking Diagram
ET2010
YMDD
Part Number
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N or D)
DD is the day of the month (01 to 31)
123
FMET-22010-DSE Rev.0.2
Apr. 12, 2016
SANKEN ELECTRIC CO.,LTD.
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FMET-22010.PDF ] |
Número de pieza | Descripción | Fabricantes |
FMET-22010 | Trench Schottky Diode | Sanken |
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