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PDF CJPF08N80 Data sheet ( Hoja de datos )
| Número de pieza | CJPF08N80 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N80
V(BR)DSS
800V
N-Channel Power MOSFET
RDS(on)MAX
1.45Ω@10V
ID
8A
TO-220F
GENERAL DESCRIPTION
The CJPF8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The CJPF8N80 is generally applied in high efficiency switch
mode power supplies.
FEATURE
z Lowe gate charge
z Lowe Crss
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
1. GATE
2. DRAIN
3. SOURCE
MARKING
EQUIVALENT CIRCUIT
123
CJPF08N80
XXX
CJPF08N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
800
±30
8
32
850
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,May,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJPF08N80.PDF ] | |
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