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CJPF02N60 fiches techniques PDF

JCET - N-Channel MOSFET

Numéro de référence CJPF02N60
Description N-Channel MOSFET
Fabricant JCET 
Logo JCET 





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CJPF02N60 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF02N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
  4.4Ω@10V
ID
2A
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
TO-220F
 
1. GATE
2. DRAIN
3. SOURCE
123
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z IDSS and VDS(on) Specified at Elevated Temperature
MARKING
EQUIVALENT CIRCUIT
CJPF02N60
XXX
CJPF02N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
PD
Single Pulsed Avalanche Energy
EAS*
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
TSTG
*EAS condition: Tj=25,VDD=50V,L=64mH,IL=2A,RG=25
www.cj-elec.com
1
Value
600
±20
2
9
2
128
62.5
150
-55 ~+150
Unit
V
A
W
mJ
/W
H,May,2016

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