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Número de pieza | CJP12N65 | |
Descripción | N-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJP12N65 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
0.85Ω@10V
ID
12A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower RDS(on)
z Low Reverse Transfer Capacitance
z Fast Switching Capability
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
Equivalent Circuit
CJP12N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX= Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Single Pulsed Avalanche Energy (note2)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
www.cj-elec.com
1
Value
650
±30
12
48
540
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
D,Feb,2016
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CJP12N65.PDF ] |
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