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CJP08N60 fiches techniques PDF

JCET - N-Channel MOSFET

Numéro de référence CJP08N60
Description N-Channel MOSFET
Fabricant JCET 
Logo JCET 





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CJP08N60 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP08N60
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
  1.3Ω@10V
ID
8A
TO-220-3L
 
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
1. GATE
2. DRAIN
3. SOURCE
MARKING
EQUIVALENT CIRCUIT
123
CJP08N60
XXX
CJP08N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
GD S
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
Value
600
±30
8
32
250
2
62.5
-55 ~+150
260
Unit
V
A
mJ
W
/W
www.cj-elec.com
1
C,Apr,2016

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