(PDF) CJP07N60 Datasheet - N-Channel MOSFET

Número de pieza	CJP07N60
Descripción	N-Channel MOSFET
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N60 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-220-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , Duration 5 seconds Symbol VDS VGS ID IDM EAS RθJA TJ, TSTG TL Value 600 ±30 7 30.8 580 62.5 -55 ~+150 260 Unit V A mJ ℃/W ℃ www.cj-elec.com 1 E,Nov,2015 1 page

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PDF CJP07N60 Data sheet ( Hoja de datos )