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PDF CJP04N65 Data sheet ( Hoja de datos )
| Número de pieza | CJP04N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJP04N65 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
123
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
CJP04N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
Value
650
±30
4.0
16
280
2
62.5
-55 ~+150
260
Unit
V
A
mJ
W
℃/W
℃
www.cj-elec.com
1
B,Apr,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJP04N65.PDF ] | |
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