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CJL818C fiches techniques PDF

JCET - PNP Transistor

Numéro de référence CJL818C
Description PNP Transistor
Fabricant JCET 
Logo JCET 





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CJL818C fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23-6L Plastic-Encapsulate Transistors
CJL818C TRANSISTOR (PNP)
DESCRIPTIONS
The device is manufactured in low voltage PNP Planar Technology with
"Base Island layout. The resulting transistor shows exceptional high gain
performance coupled with very low saturation voltage.
SOT-23-6L
FEATURE
Very low collector to emitter saturation voltage
APPLICATIONS
z Power management in portable equipments
z Switching regulator in battery charge applications
MARKING: 6
818C
1
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
ICM Collector Current -Pulsed
PC Collector Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Ptot Total Dissipation at TC = 25(note 1)
RθJC
Thermal Resistance from Junction to Case (note 1)
TJ Junction Temperature
Tstg Storage Temperature
Note 1Package mounted on FR4 PCB 25mm x 25mm.
Value
-30
-30
-5
-2
-3
0.35
357
1
125
150
-55~+150
Unit
V
V
V
A
A
W
/W
W
/W
A,Feb,2014

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