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Datasheet CJK3400A-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
CJK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJK2305 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK2305 P-Channel 8-V(D-S) MOSFET
V(BR)DSS
-12V
RDS(on)MAX
45mΩ@-4.5V 60mΩ@-2.5V 90mΩ@-1. 8V
ID
-4.1A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Swi  JCET mosfet | | |
| 2 | CJK2333 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
627-3L Plastic-Encapsulate MOSFETS
CJK 3-channel MOSFET
V(BR)DSS
-12V
RDS(on)MAX
28mΩ@-4.5V 32mΩ@-3.7V 40mΩ@-2.5V 63mΩ@-1.8V 150mΩ@-1.5V
ID
-6A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN
FEATURE TrenchFET Power MOSFET Excell JCET mosfet | | |
| 3 | CJK3400A | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3400A N-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
30 V
RDS(on)MAX
32mΩ@10V 38mΩ@4.5V
45mΩ@2.5V
ID
5.8A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
FEATURE
APPLICATION
z High d JCET mosfet | | |
| 4 | CJK3401A | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3401A P-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
-30V
RDS(on)MAX
60 mΩ@-10V 70 mΩ@-4.5V 85 mΩ@-2.5V
ID
-4.2A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
FEATURE z High dense cell desi JCET mosfet | | |
| 5 | CJK3407 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK34 07 P-Channel 30-V(D-S) MOSFET
V(BR)DSS
-30V
RDS(on)MAX
\60mΩ@-10 V 87mΩ@-4.5V
ID
-4.1A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
General Description The CJK3407 uses advanced trench technology t JCET mosfet | | |
| 6 | CJK3415 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3415 P-Channel 20-VV((DD--SS))MMOOSSFFEETT
V(BR)DSS
-20V
RDS(on)MAX
50mΩ@-4.5V 60mΩ@-2.5V 73mΩ@-1. 8V
ID
-4.0A
FEATURE Excellent RDS(ON), low gate charge,low gate voltages
APPLICATIONS Load swit JCET mosfet | |
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