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CJB08N65 Datasheet دیتاشیت PDF دانلود

دیتاشیت - JCET - N-Channel MOSFET

شماره قطعه CJB08N65
شرح مفصل N-Channel MOSFET
تولید کننده JCET 
آرم JCET 


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CJB08N65 شرح
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate MOSFETS
CJB08N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
  1.4Ω@10V
ID
8A
TO-2-L
 
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
High Current Rating
Lower RDS(on)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
1. GATE
2. DRAIN
3. SOURCE
MARKING
EQUIVALENT CIRCUIT
CJB08N65
XXX
CJB08N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
2
13
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
Duration for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
Value
650
±30
8
32
250
62.5
-55 ~+150
260
Unit
V
A
mJ
/W
www.cj-elec.com
1
B,Apr,2016

قانون اساسیصفحه 5
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