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Qunli Electric - NPN Silicon High Frequency Low Power Transistor

Numéro de référence 3DG101
Description NPN Silicon High Frequency Low Power Transistor
Fabricant Qunli Electric 
Logo Qunli Electric 





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3DG101 fiche technique
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name
Symbols Unit
3DG101
3DG110
3DG111
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-Base Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
ABC
20 30 40
15 20 30
4 (IE=0.1mA)
100 (Ta=25°C)
20
DE
20 30
15 20
4 (IE=0.1mA)
300 (Ta=25°C)
50
175
-55~+175
F Test Condition
40
IC=0.1mA
30
4 (IE=0.1mA)
300 (Ta=25°C)
50
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
0.35
(IC=10mA, IB=1mA)
1.0
(IC=10mA, IB=1mA)
0.35
(IC=10mA, IB=1mA)
Base- Emitter Saturation
VBE(sat) V
Voltage Drop
1.0
(IC=10mA, IB=1mA)
C-B Leakage Current
C-E Leakage Current
E-B Leakage Current
DC Current Gain
Transition frequency
ICBO uA
0.01(VCB=10V)
0.1(VCB=10V)
ICEO uA
0.01(VCE=10V)
0.1(VCE=10V)
IEBO uA
0.01(VEB=1.0V)
0.1(VEB=1.0V)
0.1(VEB=1.5V)
25~270
hFE
(VCE=10V, IC=0.5mA)
25~270
(VCE=10V, IC=10mA)
fT MHz
A~C:150,D~F:300 (VCE=10V, IC=10mA, f=100MHz)
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Gray
180~270
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250

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