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What is 3CA2050?

This electronic component, produced by the manufacturer "YUEJING HIGH TECHNOLOGY", performs the same function as "PNP Transistor".


3CA2050 Datasheet PDF - YUEJING HIGH TECHNOLOGY

Part Number 3CA2050
Description PNP Transistor
Manufacturers YUEJING HIGH TECHNOLOGY 
Logo YUEJING HIGH TECHNOLOGY Logo 


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广东省粤晶高科股份有限公司
GUANGDONG YUEJING HIGH TECHNOLOGY CO.,LTD
3CA2050
PNP双极晶体管
■■ 主要用途:用于彩色电视机扫描调速电路,一般高频放大电路等。
■■ MAXIMUM RATINGS(Ta=25) 最大额定值
CHARACTERISTIC 特性参数
符号
SYMBOL
集电极-基极电压
Collector-Base Voltage
VCBO
集电极-发射极电压
Collector-Emitter Voltage
VCEO
发射极-基极电压
Emitter-Base Voltage
VEBO
集电极电流
Collector Current
IC
集电极耗散功率
Collector Power Dissipation
Ta=25
Tc=25
PC
结温
Junction Temperature
Tj
储存温度
Storage Temperature
Tstg
额定值
RATING
-180
-160
-6
-1.5
1.5
25
150
-55150
单位
UNIT
V
V
V
A
W
■■ ELECTRICAL CHARACTERISTICS 电特性
(Ta=25unless otherwise noted 如无特殊说明,温度为25)
特性参数
CHARACTERISTIC
符号
测试条件
SYMBOL TEST CONDITIONS
集电极-基极反向截止电流
Collector Cut-off Current
ICBO VCB= -180V, IE=0
发射极-基极反向截止电流
Emitter Cut-off Current
IEBO VEB= -6V, IC=0
集电极-基极反向击穿电压
Collector-Base Breakdown Voltage
V(BR)CBO IC= -100uA
集电极-发射极反向击穿电压
Collector-Emitter Breakdown Voltage
V(BR)CEO IC= -1mA
发射极-基极反向击穿电压
Emitter-Base Breakdown Voltage
V(BR)EBO IE= -100uA
直流电流增益
DC Current Gain
hFE VCE= -5V, IC= -200mA
集电极-发射极饱和压降
Collector-Emitter Saturation Voltage
VCE(sat) IC= 500mA, IB= 50mA
特征频率
Gain Bandwidth Product
fT VCE= -10V, IC= -50mA
最小值 典型值 最大值 单位
MIN. TYP. MAX. UNIT
— — -10 µA
— — -10 µA
-180 — — V
-160 — — V
-6 — — V
60 — 240 —
— — -1 V
50 — — MHz
■■ DEVICE MARKING
Classification
hFE
打标、分档
R
60140
O
100240


Part Details

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