DataSheet.es    


PDF HCS80R250T Data sheet ( Hoja de datos )

Número de pieza HCS80R250T
Descripción 800V N-Channel Super Junction MOSFET
Fabricantes SemiHow 
Logotipo SemiHow Logotipo



Hay una vista previa y un enlace de descarga de HCS80R250T (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! HCS80R250T Hoja de datos, Descripción, Manual

August 2016
HCS80R250T
800V N-Channel Super Junction MOSFET
Description
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
850
18
0.25
58
Unit
V
A
ȍ
nC
Features
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ Motor Control & LED Lighting Power
‰ DC-DC Converters
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt ruggedness, VDS=0…480V
Reverse diode dv/dt, VDS=0…480V, IDS”ID
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
ρ30
18 *
11*
54 *
280
7.5
0.5
50
15
34
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Units
V
V
A
A
A
mJ
A
mJ
V/ns
V/ns
W
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.67
80
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͲΦΘΦΤΥ͑ͣͧ͑͢͡

1 page




HCS80R250T pdf
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͲΦΘΦΤΥ͑ͣͧ͑͢͡

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet HCS80R250T.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
HCS80R250T800V N-Channel Super Junction MOSFETSemiHow
SemiHow

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar