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SemiHow - 600V N-Channel Super Junction MOSFET

Numéro de référence HCA60R095T
Description 600V N-Channel Super Junction MOSFET
Fabricant SemiHow 
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HCA60R095T fiche technique
June 2016
HCA60R095T
600V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
650
40
95
109
Unit
V
A
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
Package & Internal Circuit
TO-247
GD S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt ruggedness, VDS=0…480V
Reverse diode dv/dt, VDS=0…480V, IDS”ID
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
600
ρ30
40
25
120
1000
12
1.5
50
15
400
-55 to +150
300
Units
V
V
A
A
A
mJ
A
mJ
V/ns
V/ns
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.31
40
Units
/W
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