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PDF IRLB8314PbF Data sheet ( Hoja de datos )

Número de pieza IRLB8314PbF
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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IRLB8314PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Best in Class Performance for UPS/Inverter Applications
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
 
G
D
S
Base part number Package Type
IRLB8314PbF
TO-220AB
G
Gate
Standard Pack
Form
Tube
Quantity
50
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID (Silicon Limited)
ID (Package Limited)
30
2.4
3.2
40
171
130A
V
m
nC
A
GDS
TO-220AB
D
Drain
S
Source
Orderable Part Number
IRLB8314PbF
Absolute Maximium Rating
Symbol
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance  
Symbol
Parameter
RJC
RCS
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Notes through  are on page 8
Max.
± 20
171
120
130
664
125
63
0.83
-55 to + 175  
300
10 lbf·in (1.1 N·m)
Units
V
A 
W
W
W/°C
°C  
 
Typ.
–––
0.50
–––
Max.
1.2
–––
62
Units
°C/W  
1 2016-08-04

1 page




IRLB8314PbF pdf
 
10
ID = 86A
8
6
4 TJ = 125°C
2
TJ = 25°C
0
2
6 10 14 18
VGS, Gate-to-Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
IRLB8314PbF
800
ID
TOP
14A
30A
600 BOTTOM 68A
400
200
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 13. Maximum Avalanche Energy vs. Drain Current
5 2016-08-04

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