|
|
PDF IRFU6215PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFU6215PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFU6215PbF (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
IRFR6215PbF
IRFU6215PbF
P-Channel
175°C Operating Temperature
Surface Mount (IRFR6215)
Straight Lead (IRFU6215)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient device
for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRFU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
-150V
0.295
-13A
D
D
S
G
D- Pak
IRFR6215PbF
S
GD
I- Pak
IRFU6215PbF
G
Gate
D
Drain
S
Source
Base part number
IRFU6215PbF
IRFR6215PbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU6215PbF
IRFR6215PbF
IRFR6215TRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2016-5-31
1 page  
IRFR/U6215PbF
14
12
10
8
6
4
2
0
25
50 75 100 125 150
TC, Case Temperature ( °C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
10
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = PDM x Z thJC + T C
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
5 2016-5-31
5 Page 
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
D-Pak
I-Pak
IRFR/U6215PbF
Industrial
(per JEDEC JESD47F) ††
MSL1
(per JEDEC J-STD-020D) ††
Yes
† Qualification standards can be found at Infineon’s web site www.infineon.com
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
5/31/2016
Comments
Updated datasheet with corporate template.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™,
Op MOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO‐SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respec ve owners.
Edi on 2016‐04‐19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a ques on about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The informa on given in this document shall in no
event be regarded as a guarantee of condi ons or
characteris cs (“Beschaffenheitsgaran e”) .
With respect to any examples, hints or any typical
values stated herein and/or any informa on
regarding the applica on of the product, Infineon
Technologies hereby disclaims any and all
warran es and liabili es of any kind, including
without limita on warran es of non‐infringement
of intellectual property rights of any third party.
In addi on, any informa on given in this document
is subject to customer’s compliance with its
obliga ons stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applica ons.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended applica on and the completeness of the
product informa on given in this document with
respect to such applica on.
For further informa on on the product, technology,
delivery terms and condi ons and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automo ve Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For informa on on
the types in ques on please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a wri en document signed by
authorized representa ves of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applica ons where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
11
2016-5-31
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRFU6215PbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFU6215PbF | Power MOSFET ( Transistor ) | Infineon |
| IRFU6215PBF | Power MOSFET ( Transistor ) |  International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |