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PDF IRFB38N20DPbF Data sheet ( Hoja de datos )

Número de pieza IRFB38N20DPbF
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IRFB38N20DPbF Hoja de datos, Descripción, Manual

 
Applications
High frequency DC-DC converters
Plasma Display Panel
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
VDS 200 V
VDS(Avalanche) min.
RDS(on) max @ 10V
TJ max
260 V
54 m
175 °C
DD
D
GDS
S
G
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
S
GD
TO-262 Pak
IRFSL38N20DPbF
G
Gate
D
Drain
S
Source
Base part number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
43*
30*
180
3.8
300*
2.0*
± 30
9.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
V/ns
 
°C 
 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat, Greased Surface
RJA Junction-to-Ambient
RJA Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* RJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2.
1 2016-5-31

1 page




IRFB38N20DPbF pdf
  IRFB/S/SL38N20DPbF
45
40
35
30
25
20
15
10
5
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty f actor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+T C
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB38N20DPbF arduino
  IRFB/S/SL38N20DPbF
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 2016-5-31

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