DataSheetWiki


IRF9530NLPbF fiches techniques PDF

Infineon - Power MOSFET ( Transistor )

Numéro de référence IRF9530NLPbF
Description Power MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





1 Page

No Preview Available !





IRF9530NLPbF fiche technique
  IRF9530NSPbF
IRF9530NLPbF
Benefits
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole(IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF9530NL) is available for low-
profile applications.
 
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
-100V
0.20
-14A
DD
S
G
D2 Pak
IRF9530NSPbF
S
GD
TO-262 Pak
IRF9530NLPbF
G
Gate
D
Drain
S
Source
Base part number
IRF9530NLPbF
IRF9530NSPbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF9530NLPbF (Obsolete)
IRF9530NSTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy (Thermally Limited) 
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount, steady state)
Max.
-14
-10
-56
3.8
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
 
Units
°C/W
1 2016-5-27

PagesPages 11
Télécharger [ IRF9530NLPbF ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF9530NLPbF Power MOSFET ( Transistor ) Infineon
Infineon
IRF9530NLPBF (IRF9530NLPBF / IRF9530NSPBF) Advanced Process Technology Surface Mount International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche