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Numéro de référence | IRF6218S | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l Reset Switch for Active Clamp
Reset DC-DC converters
SMPS MOSFET
PD - 95863
IRF6218S
IRF6218L
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
:-150V 150m @VGS = -10V -27A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
G
D
D2Pak
TO-262
S IRF6218S IRF6218L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
RθJA
ghJunction-to-Ambient (PCB Mounted, steady state)
Max.
-150
± 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.61
40
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes through are on page 9
www.irf.com
1
4/22/04
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Pages | Pages 9 | ||
Télécharger | [ IRF6218S ] |
No | Description détaillée | Fabricant |
IRF6218 | SMPS MOSFET | International Rectifier |
IRF6218L | Power MOSFET ( Transistor ) | International Rectifier |
IRF6218PBF | HEXFET Power MOSFET | International Rectifier |
IRF6218S | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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