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Etron Technology - 32M x 16 bit DDR Synchronous DRAM

Numéro de référence EM6AB160
Description 32M x 16 bit DDR Synchronous DRAM
Fabricant Etron Technology 
Logo Etron Technology 





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EM6AB160 fiche technique
EtronTech
EM6AB160
32M x 16 bit DDR Synchronous DRAM (SDRAM)
Advance (Rev. 1.3, Jun. /2015)
Features
Fast clock rate: 250/200MHz
Differential Clock CK & CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 8M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
Individual byte write mask control
DM Write Latency = 0
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
Precharge & active power down
Power supplies: VDD & VDDQ = 2.5V 0.2V
Operating Temperature: TA = 0~70°C
Interface: SSTL_2 I/O Interface
Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb and Halogen free
Package: 60-Ball, 8x13x1.2 mm (max) FBGA
- Pb free and Halogen Free
Overview
The EM6AB160 SDRAM is a high-speed CMOS double
data rate synchronous DRAM containing 512 Mbits. It is
internally configured as a quad 8M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs
occur at both rising edges of CK and CK . Read and
write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command. The EM6AB160 provides
programmable Read or Write burst lengths of 2, 4, or 8.
An auto precharge function may be enabled to provide
a self-timed row precharge that is initiated at the end of
the burst sequence. The refresh functions, either Auto
or Self Refresh are easy to use. In addition, EM6AB160
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to
high performance main memory and graphics
applications.
Table 1. Ordering Information
Part Number
Clock Frequency Data Rate
EM6AB160TSE-4G
250MHz
500Mbps/pin
EM6AB160TSE-5G
200MHz
400Mbps/pin
EM6AB160WKE-4H
250MHz
500Mbps/pin
EM6AB160WKE-5H
200MHz
400Mbps/pin
TS : indicates TSOPII package
WK: indicates 8x13x1.2 mm FBGA package
E: indicates Generation Code
G: indicates Pb and Halogen free for TSOPII Package
H: indicates Pb and Halogen free for FBGA Package
Package
TSOPII
TSOPII
FBGA
FBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.

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