PDF EM6AA160 Data sheet ( Hoja de datos )

Número de pieza	EM6AA160
Descripción	16M x 16 bit DDR Synchronous DRAM
Fabricantes	Etron Technology
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No Preview Available ! EtronTech EM6AA160 Etron Confidential 16M x 16 bit DDR Synchronous DRAM (SDRAM) Preliminary (Rev. 1.3, Mar. /2014) Features • Fast clock rate: 250/200MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 4M x 16-bit for each bank • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved • Individual byte write mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 8192 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD & VDDQ = 2.5V ± 0.2V • Interface: SSTL_2 I/O Interface • Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb free and Halogen free • Package: 60-Ball, 8x13x1.2 mm (max) TFBGA - Pb free and Halogen Free Overview The EM6AA160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. It is internally configured as a quad 4M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK . Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM6AA160 provides programmable Read or Write burst lengths of 2, 4, or 8. An auto precharge function may be enabled to provide a self- timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, EM6AA160 features programmable DLL option. By having a programmable mode register and extended mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth, result in a device particularly well suited to high performance main memory and graphics applications. Table 1. Ordering Information Part Number Clock Frequency Data Rate EM6AA160TSC-4G 250MHz 500Mbps/pin EM6AA160TSC-5G 200MHz 400Mbps/pin EM6AA160BKC-4H 250MHz 500Mbps/pin EM6AA160BKC-5H 200MHz 400Mbps/pin TS: indicates TSOP II Package BK: indicates TFBGA Package C: indicates Generation Code G: indicates Pb free and Halogen Free for TSOPII Package H: indicates Pb free and Halogen Free for TFBGA Package Package TSOPII TSOPII TFBGA TFBGA Etron Technology, Inc. No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc. reserves the right to change products or specification without notice. 1 page EtronTech EM6AA160 VDD VSS VDDQ VSSQ VREF NC Supply Power Supply: 2.5V 0.2V . Supply Ground Supply DQ Power: 2.5V 0.2V. Provide isolated power to DQs for improved noise immunity. Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity. Supply Reference Voltage for Inputs: +0.5VDDQ - No Connect: These pins should be left unconnected. Etron Confidential 5 Rev. 1.3 Mar. /2014 5 Page EtronTech EM6AA160 Table 12. Absolute Maximum Rating Symbol Item Rating Unit VIN, VOUT Input, Output Voltage - 0.5~ VDDQ + 0.5 V VDD, VDDQ Power Supply Voltage - 1~3.6 V TA Ambient Temperature 0~70 °C TSTG Storage Temperature -55~150 °C TSOLDER Soldering Temperature 260 °C PD Power Dissipation 1W IOS Short Circuit Output Current 50 mA Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Note2: These voltages are relative to Vss Table 13. Recommended D.C. Operating Conditions (TA = 0 ~ 70 °C) Symbol Parameter Min. Max. Unit Note VDD Power Supply Voltage 2.3 2.7 V VDDQ Power Supply Voltage (for I/O Buffer) 2.3 2.7 V VREF Input Reference Voltage 0.49VDDQ 0.51* VDDQ V VIH (DC) Input High Voltage (DC) VIL (DC) Input Low Voltage (DC) VTT Termination Voltage VIN (DC) Input Voltage Level, CK and CK inputs VID (DC) Input Different Voltage, CK and CK inputs II Input leakage current IOZ Output leakage current IOH Output High Current IOL Output Low Current Note: All voltages are referenced to VSS. VREF + 0.15 -0.3 VREF - 0.04 -0.3 0.36 -2 -5 -16.2 16.2 VDDQ + 0.3 V VREF – 0.15 VREF + 0.04 VDDQ + 0.3 V V V VDDQ + 0.6 V 2 µA 5 µA - mA VOH = 1.95V - mA VOL = 0.35V Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 °C) Symbol Parameter Min. Max. Unit CIN1 Input Capacitance (CK, CK ) 2 3 pF CIN2 Input Capacitance (All other input-only pins) 2 3 pF CI/O DQ, DQS, DM Input/Output Capacitance 4 5 pF Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested Etron Confidential 11 Rev. 1.3 Mar. /2014 11 Page

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