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CJQ07N10 fiches techniques PDF

JCET - N-Channel Power MOSFET / Transistor

Numéro de référence CJQ07N10
Description N-Channel Power MOSFET / Transistor
Fabricant JCET 
Logo JCET 





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CJQ07N10 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ07N10 N-Channel Power MOSFET
DESCRIPTION
The device is the highest performance trench N-ch MOSFETs with extreme
high cell density , which provide excellent RDSON and gate charge for most of
the synchronous buck converter applications . 100% EAS guaranteed with full
function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
APPLICATIONS
Secondary Synchronous Rectifier
LED TV Back Light
MARKING
SOP8
D DDD
8 7 65
1 234
S S SG
Q07N10= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
Front side
YY=Date Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Symbol
VDS
Limit
100
Unit
V
Gate-Source Voltage
VGS ±20
V
Continuous Drain Current
ID 7 A
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(1)
28
16
A
mJ
Power Dissipation
PD 1.4 W
Thermal Resistance from Junction to Ambient
RθJA 89 /W
Junction Temperature
TJ 150
Storage Temperature Range
Tstg -55 ~+150
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
(1).EAS condition: VDD=25V,L=0.1mH, RG=25Ω, Starting TJ = 25°C
www.cj-elec.com
1
A-3,Aug,2015

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