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CJM1216 fiches techniques PDF

JCET - P-Channel Power MOSFET

Numéro de référence CJM1216
Description P-Channel Power MOSFET
Fabricant JCET 
Logo JCET 





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CJM1216 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS
CJM1216 P-Channel Power MOSFET
V(BR)DSS
-12 V
RDS(on)MAX
21m@-4.5V
27m@-2.5V
ID
-16A
DFNWB2×2-6L-J
1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
DESCRIPTION
The CJM1216 uses advanced trench technology to provide
excellent RDS(on) , low gate charge and operation with low gate voltage.
. This device is suitable for use as a load switching application
and a wide variety of other applications.
FEATURES
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
APPLICATIONS
PWM application
Load switch
Battery charge in cellular handset
0$5.,1*
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (note 1)
Power Dissipation (note 2 , Ta=25)
Maximum Power Dissipation (note 3 , Tc=25)
Thermal Resistance from Junction to Ambient (note 4)
Thermal Resistance from Junction to Case (note 4)
Junction Temperature
Storage Temperature
Symbol
VDSS
VGS
ID
IDM
PD
RθJA
RθJC
Tj
TSTG
www.cj-elec.com
1
Value
-12
±8
-16
-65
2.5
18
50
6.9
150
-55 ~+150
Unit
V
A
W
/W
H,Sep,2016

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